IMBG120R045M1H

IMBG120R045M1H 

CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology

Features 

• Very low switching losses

• Short circuit withstand time 3 µs

• Fully controllable dV/dt

• Benchmark gate threshold voltage, VGS(th) = 4.5V 

• Robust against parasitic turn on, 0V turn-off gate voltage can be applied 

• Robust body diode for hard commutation 

• .XT interconnection technology for best-in-class thermal performance 

• Package creepage and clearance distance > 6.1mm 

• Sense pin for optimized switching performance  

Benefits 

• Efficiency improvement 

• Enabling higher frequency 

• Increased power density 

• Cooling effort reduction 

• Reduction of system complexity and cost

Potential applications

• Drives 

• Infrastructure – Charger 

• Energy generation - Solar string inverter and solar optimizer 

• Industrial power supplies - Industrial UPS