Vishay's new 80 V symmetrical dual-channel MOSFETs achieve an industry-leading low RDS(ON), significantly improving power density, energy efficiency, and thermal performance.

  Recently, Vishay Intertechnology, Inc. (NYSE ticker: VSH) announced the launch of a new 80 V symmetrical dual-channel n-channel power MOSFET - SiZF4800LDT, which integrates high-side and low-side TrenchFET Gen IV MOSFETs into a 3.3 mm x 3.3 mm PowerPAIR 3x3FS monolithic package. The Vishay Siliconix SiZF4800LDT is designed for power conversion in industrial and telecommunications applications, offering enhanced thermal performance while improving power density and energy efficiency, reducing component count, and simplifying design.

The newly introduced dual-channel MOSFET can replace two discrete devices in PowerPAK 1212 packages, saving 50% of board space. The device provides a space-saving solution for designers for use in synchronous buck converters, point-of-load (POL) converters, and half-bridge and full-bridge power stages in DC/DC converters, suitable for applications such as wireless base stations, industrial motor drives, welding equipment, and power tools. In these applications, the SiZF4800LDT's high- and low-side MOSFETs offer a 50% duty cycle optimized combination, with logic-level turn-on at 4.5 V to simplify circuit driving.

To enhance power density, this MOSFET has an on-resistance of just 18.5 mOhms at 4.5 V, which is an industry-leading level and 16% lower than the nearest competitive device with the same package size. The SiZF4800LDT's low on-resistance and gate charge product, an important figure of merit (FOM) for MOSFET power conversion applications, is 131 mOhm*nC, which enhances efficiency in high-frequency switching applications.

The device utilizes flip-chip technology to improve heat dissipation, with 54% lower thermal resistance compared to competitive MOSFETs. With its low on-resistance and thermal resistance, the SiZF4800LDT provides a continuous drain current of 36 A, which is 38% higher than that of the nearest competitor devices. The MOSFET's unique pin configuration helps facilitate PCB layout simplification and supports shortening of switching loops, thereby reducing parasitic inductance. The SiZF4800LDT has been subjected to 100% Rg and UIS testing, is compliant with RoHS standards, and is halogen-free.